Counterfeiting Deterrent and Security Devices, Systems, and Methods

ABSTRACT

A counterfeiting deterrent device according to one implementation of the disclosure includes a plurality of layers formed by an additive process. Each of the layers may have a thickness of less than 100 microns. At least one of the layers has a series of indentations formed in an outer edge of the layer such that the indentations can be observed to verify that the device originated from a predetermined source. According to another implementation, a counterfeiting deterrent device includes at least one raised layer having outer edges in the shape of a logo. A light source is configured and arranged to shine a light through a slit in a substrate layer of the device and past an intermediate layer to light up the outer edge of the raised layer. The layers of the device are formed by an additive process and have a thickness of less than 100 microns each.

RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.15/389,149, filed on Dec. 22, 2016 (P-US327-C-MF), which is acontinuation of U.S. patent application Ser. No. 15/076,490, filed onMar. 21, 2016 (P-US327-B-MF), now U.S. Pat. No. 9,567,682, which is acontinuation of U.S. patent application Ser. No. 14/333,458, filed onJul. 16, 2014 (P-US327-A-MF), now U.S. Pat. No. 9,290,854, which claimsthe benefit of U.S. Provisional Patent Application No. 61/846,865, filedon Jul. 16, 2013. Each of these applications is incorporated herein byreference as if set forth in full herein.

INCORPORATION BY REFERENCE

All publications and patent applications mentioned in this specificationare herein incorporated by reference in their entirety to the sameextent as if each individual publication or patent application wasspecifically and individually indicated to be incorporated by reference.

FIELD

The present disclosure relates generally to the field ofelectrochemically fabricating multi-layer three dimensional structures,and more specifically to devices formed by such processes for use asanti-counterfeiting elements in commercial devices such as for examplewatches, jewelry, original art work, limited edition art work, or otheritems subject to counterfeiting.

BACKGROUND

Electrochemical Fabrication:

An electrochemical fabrication technique for forming three-dimensionalstructures from a plurality of adhered layers is being commerciallypursued by Microfabrica® Inc. (formerly MEMGen Corporation) of Van Nuys,Calif. under the name EFAB®.

Various electrochemical fabrication techniques were described in U.S.Pat. No. 6,027,630, issued on Feb. 22, 2000 to Adam Cohen. Someembodiments of this electrochemical fabrication technique allow theselective deposition of a material using a mask that includes apatterned conformable material on a support structure that isindependent of the substrate onto which plating will occur. Whendesiring to perform an electrodeposition using the mask, the conformableportion of the mask is brought into contact with a substrate, but notadhered or bonded to the substrate, while in the presence of a platingsolution such that the contact of the conformable portion of the mask tothe substrate inhibits deposition at selected locations. Forconvenience, these masks might be generically called conformable contactmasks; the masking technique may be generically called a conformablecontact mask plating process. More specifically, in the terminology ofMicrofabrica Inc. such masks have come to be known as INSTANT MASKS™ andthe process known as INSTANT MASKING™ or INSTANT MASK™ plating.Selective depositions using conformable contact mask plating may be usedto form single selective deposits of material or may be used in aprocess to form multi-layer structures. The teachings of the '630 patentare hereby incorporated herein by reference as if set forth in fullherein. Since the filing of the patent application that led to the abovenoted patent, various papers about conformable contact mask plating(i.e. INSTANT MASKING) and electrochemical fabrication have beenpublished:

-   (1) A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and P.    Will, “EFAB: Batch production of functional, fully-dense metal parts    with micro-scale features”, Proc. 9th Solid Freeform Fabrication,    The University of Texas at Austin, p 161, August 1998.-   (2) A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and P.    Will, “EFAB: Rapid, Low-Cost Desktop Micromachining of High Aspect    Ratio True 3-D MEMS”, Proc. 12th IEEE Micro Electro Mechanical    Systems Workshop, IEEE, p 244, January 1999.-   (3) A. Cohen, “3-D Micromachining by Electrochemical Fabrication”,    Micromachine Devices, March 1999.-   (4) G. Zhang, A. Cohen, U. Frodis, F. Tseng, F. Mansfeld, and P.    Will, “EFAB: Rapid Desktop Manufacturing of True 3-D    Microstructures”, Proc. 2nd International Conference on Integrated    MicroNanotechnology for Space Applications, The Aerospace Co., April    1999.-   (5) F. Tseng, U. Frodis, G. Zhang, A. Cohen, F. Mansfeld, and P.    Will, “EFAB: High Aspect Ratio, Arbitrary 3-D Metal Microstructures    using a Low-Cost Automated Batch Process”, 3rd International    Workshop on High Aspect Ratio MicroStructure Technology (HARMST'99),    June 1999.-   (6) A. Cohen, U. Frodis, F. Tseng, G. Zhang, F. Mansfeld, and P.    Will, “EFAB: Low-Cost, Automated Electrochemical Batch Fabrication    of Arbitrary 3-D Microstructures”, Micromachining and    Microfabrication Process Technology, SPIE 1999 Symposium on    Micromachining and Microfabrication, September 1999.-   (7) F. Tseng, G. Zhang, U. Frodis, A. Cohen, F. Mansfeld, and P.    Will, “EFAB: High Aspect Ratio, Arbitrary 3-D Metal Microstructures    using a Low-Cost Automated Batch Process”, MEMS Symposium, ASME 1999    International Mechanical Engineering Congress and Exposition,    November, 1999.-   (8) A. Cohen, “Electrochemical Fabrication (EFAB™)”, Chapter 19 of    The MEMS Handbook, edited by Mohamed Gad-El-Hak, CRC Press, 2002.-   (9) Microfabrication—Rapid Prototyping's Killer Application”, pages    1-5 of the Rapid Prototyping Report, CAD/CAM Publishing, Inc., June    1999.

The disclosures of these nine publications are hereby incorporatedherein by reference as if set forth in full herein.

An electrochemical deposition process for forming multilayer structuresmay be carried out in a number of different ways as set forth in theabove patent and publications. In one form, this process involves theexecution of three separate operations during the formation of eachlayer of the structure that is to be formed:

-   -   1. Selectively depositing at least one material by        electrodeposition upon one or more desired regions of a        substrate. Typically this material is either a structural        material or a sacrificial material.    -   2. Then, blanket depositing at least one additional material by        electrodeposition so that the additional deposit covers both the        regions that were previously selectively deposited onto, and the        regions of the substrate that did not receive any previously        applied selective depositions. Typically this material is the        other of a structural material or a sacrificial material.    -   3. Finally, planarizing the materials deposited during the first        and second operations to produce a smoothed surface of a first        layer of desired thickness having at least one region containing        the at least one material and at least one region containing at        least the one additional material.

After formation of the first layer, one or more additional layers may beformed adjacent to an immediately preceding layer and adhered to thesmoothed surface of that preceding layer. These additional layers areformed by repeating the first through third operations one or more timeswherein the formation of each subsequent layer treats the previouslyformed layers and the initial substrate as a new and thickeningsubstrate.

Once the formation of all layers has been completed, at least a portionof at least one of the materials deposited is generally removed by anetching process to expose or release the three-dimensional structurethat was intended to be formed. The removed material is a sacrificialmaterial while the material that forms part of the desired structure isa structural material.

One method of performing the selective electrodeposition involved in thefirst operation is by conformable contact mask plating. In this type ofplating, one or more conformable contact (CC) masks are first formed.The CC masks include a support structure onto which a patternedconformable dielectric material is adhered or formed. The conformablematerial for each mask is shaped in accordance with a particularcross-section of material to be plated (the pattern of conformablematerial is complementary to the pattern of material to be deposited).In such a process, at least one CC mask is used for each uniquecross-sectional pattern that is to be plated.

The support for a CC mask may be a plate-like structure formed of ametal that is to be selectively electroplated and from which material tobe plated will be dissolved. In this typical approach, the support willact as an anode in an electroplating process. In an alternativeapproach, the support may instead be a porous or otherwise perforatedmaterial through which deposition material will pass during anelectroplating operation on its way from a distal anode to a depositionsurface. In either approach, it is possible for multiple CC masks toshare a common support, i.e. the patterns of conformable dielectricmaterial for plating multiple layers of material may be located indifferent areas of a single support structure. When a single supportstructure contains multiple plating patterns, the entire structure isreferred to as the CC mask while the individual plating masks may bereferred to as “submasks”. In the present application such a distinctionwill be made only when relevant to a specific point being made.

In preparation for performing the selective deposition of the firstoperation, the conformable portion of the CC mask is placed inregistration with and pressed against a selected portion of (1) thesubstrate, (2) a previously formed layer, or (3) a previously depositedportion of a layer on which deposition is to occur. The pressingtogether of the CC mask and relevant substrate occur in such a way thatall openings, in the conformable portions of the CC mask contain platingsolution. The conformable material of the CC mask that contacts thesubstrate acts as a barrier to electrodeposition while the openings inthe CC mask that are filled with electroplating solution act as pathwaysfor transferring material from an anode (e.g. the CC mask support) tothe non-contacted portions of the substrate (which act as a cathodeduring the plating operation) when an appropriate potential and/orcurrent are supplied.

An example of a CC mask and CC mask plating are shown in FIGS. 1A-1C.FIG. 1A shows a side view of a CC mask 8 consisting of a conformable ordeformable (e.g. elastomeric) insulator 10 patterned on an anode 12. Theanode has two functions. One is as a supporting material for thepatterned insulator 10 to maintain its integrity and alignment since thepattern may be topologically complex (e.g., involving isolated “islands”of insulator material). The other function is as an anode for theelectroplating operation. FIG. 1A also depicts a substrate 6, separatedfrom mask 8, onto which material will be deposited during the process offorming a layer. CC mask plating selectively deposits material 22 ontosubstrate 6 by simply pressing the insulator against the substrate thenelectrodepositing material through apertures 26 a and 26 b in theinsulator as shown in FIG. 1B. After deposition, the CC mask isseparated, preferably non-destructively, from the substrate 6 as shownin FIG. 10.

The CC mask plating process is distinct from a “through-mask” platingprocess in that in a through-mask plating process the separation of themasking material from the substrate would occur destructively.Furthermore in a through mask plating process, opening in the maskingmaterial are typically formed while the masking material is in contactwith and adhered to the substrate. As with through-mask plating, CC maskplating deposits material selectively and simultaneously over the entirelayer. The plated region may consist of one or more isolated platingregions where these isolated plating regions may belong to a singlestructure that is being formed or may belong to multiple structures thatare being formed simultaneously. In CC mask plating as individual masksare not intentionally destroyed in the removal process, they may beusable in multiple plating operations.

Another example of a CC mask and CC mask plating is shown in FIGS.1D-1G. FIG. 1D shows an anode 12′ separated from a mask 8′ that includesa patterned conformable material 10′ and a support structure 20. FIG. 1Dalso depicts substrate 6 separated from the mask 8′. FIG. 1E illustratesthe mask 8′ being brought into contact with the substrate 6. FIG. 1Fillustrates the deposit 22′ that results from conducting a current fromthe anode 12′ to the substrate 6. FIG. 1G illustrates the deposit 22′ onsubstrate 6 after separation from mask 8′. In this example, anappropriate electrolyte is located between the substrate 6 and the anode12′ and a current of ions coming from one or both of the solution andthe anode are conducted through the opening in the mask to the substratewhere material is deposited. This type of mask may be referred to as ananodeless INSTANT MASK™ (AIM) or as an anodeless conformable contact(ACC) mask.

Unlike through-mask plating, CC mask plating allows CC masks to beformed completely separate from the substrate on which plating is tooccur (e.g. separate from a three-dimensional (3D) structure that isbeing formed). CC masks may be formed in a variety of ways, for example,using a photolithographic process. All masks can be generatedsimultaneously, e.g. prior to structure fabrication rather than duringit. This separation makes possible a simple, low-cost, automated,self-contained, and internally-clean “desktop factory” that can beinstalled almost anywhere to fabricate 3D structures, leaving anyrequired clean room processes, such as photolithography to be performedby service bureaus or the like.

An example of the electrochemical fabrication process discussed above isillustrated in FIGS. 2A-2F. These figures show that the process involvesdeposition of a first material 2 which is a sacrificial material and asecond material 4 which is a structural material. The CC mask 8, in thisexample, includes a patterned conformable material (e.g. an elastomericdielectric material) 10 and a support 12 which is made from depositionmaterial 2. The conformal portion of the CC mask is pressed againstsubstrate 6 with a plating solution 14 located within the openings 16 inthe conformable material 10. An electric current, from power supply 18,is then passed through the plating solution 14 via (a) support 12 whichdoubles as an anode and (b) substrate 6 which doubles as a cathode. FIG.2A illustrates that the passing of current causes material 2 within theplating solution and material 2 from the anode 12 to be selectivelytransferred to and plated on the substrate 6. After electroplating thefirst deposition material 2 onto the substrate 6 using CC mask 8, the CCmask 8 is removed as shown in FIG. 2B. FIG. 2C depicts the seconddeposition material 4 as having been blanket-deposited (i.e.non-selectively deposited) over the previously deposited firstdeposition material 2 as well as over the other portions of thesubstrate 6. The blanket deposition occurs by electroplating from ananode (not shown), composed of the second material, through anappropriate plating solution (not shown), and to the cathode/substrate6. The entire two-material layer is then planarized to achieve precisethickness and flatness as shown in FIG. 2D. After repetition of thisprocess for all layers, the multi-layer structure 20 formed of thesecond material 4 (i.e. structural material) is embedded in firstmaterial 2 (i.e. sacrificial material) as shown in FIG. 2E. The embeddedstructure is etched to yield the desired device, i.e. structure 20, asshown in FIG. 2F.

Various components of an exemplary manual electrochemical fabricationsystem 32 are shown in FIGS. 3A-3C. The system 32 consists of severalsubsystems 34, 36, 38, and 40. The substrate holding subsystem 34 isdepicted in the upper portions of each of FIGS. 3A-3C and includesseveral components: (1) a carrier 48, (2) a metal substrate 6 onto whichthe layers are deposited, and (3) a linear slide 42 capable of movingthe substrate 6 up and down relative to the carrier 48 in response todrive force from actuator 44. Subsystem 34 also includes an indicator 46for measuring differences in vertical position of the substrate whichmay be used in setting or determining layer thicknesses and/ordeposition thicknesses. The subsystem 34 further includes feet 68 forcarrier 48 which can be precisely mounted on subsystem 36.

The CC mask subsystem 36 shown in the lower portion of FIG. 3A includesseveral components: (1) a CC mask 8 that is actually made up of a numberof CC masks (i.e. submasks) that share a common support/anode 12, (2)precision X-stage 54, (3) precision Y-stage 56, (4) frame 72 on whichthe feet 68 of subsystem 34 can mount, and (5) a tank 58 for containingthe electrolyte 16. Subsystems 34 and 36 also include appropriateelectrical connections (not shown) for connecting to an appropriatepower source (not shown) for driving the CC masking process.

The blanket deposition subsystem 38 is shown in the lower portion ofFIG. 3B and includes several components: (1) an anode 62, (2) anelectrolyte tank 64 for holding plating solution 66, and (3) frame 74 onwhich feet 68 of subsystem 34 may sit. Subsystem 38 also includesappropriate electrical connections (not shown) for connecting the anodeto an appropriate power supply (not shown) for driving the blanketdeposition process.

The planarization subsystem 40 is shown in the lower portion of FIG. 3Cand includes a lapping plate 52 and associated motion and controlsystems (not shown) for planarizing the depositions.

In addition to teaching the use of CC masks for electrodepositionpurposes, the '630 patent also teaches that the CC masks may be placedagainst a substrate with the polarity of the voltage reversed andmaterial may thereby be selectively removed from the substrate. Itindicates that such removal processes can be used to selectively etch,engrave, and polish a substrate, e.g., a plaque.

The '630 patent further indicates that the electroplating methods andarticles disclosed therein allow fabrication of devices from thin layersof materials such as, e.g., metals, polymers, ceramics, andsemiconductor materials. It further indicates that although theelectroplating embodiments described therein have been described withrespect to the use of two metals, a variety of materials, e.g.,polymers, ceramics and semiconductor materials, and any number of metalscan be deposited either by the electroplating methods therein, or inseparate processes that occur throughout the electroplating method. Itindicates that a thin plating base can be deposited, e.g., bysputtering, over a deposit that is insufficiently conductive (e.g., aninsulating layer) so as to enable subsequent electroplating. It alsoindicates that multiple support materials (i.e. sacrificial materials)can be included in the electroplated element allowing selective removalof the support materials.

The '630 patent additionally teaches that the electroplating methodsdisclosed therein can be used to manufacture elements having complexmicrostructure and close tolerances between parts. An example is givenwith the aid of FIGS. 14A-14E of that patent. In the example, elementshaving parts that fit with close tolerances, e.g., having gaps betweenabout 1-5 um, including electroplating the parts of the device in anunassembled, preferably pre-aligned state. In such embodiments, theindividual parts can be moved into operational relation with each otheror they can simply fall together. Once together the separate parts maybe retained by clips or the like.

Another method for forming microstructures from electroplated metals(i.e. using electrochemical fabrication techniques) is taught in U.S.Pat. No. 5,190,637 to Henry Guckel, entitled “Formation ofMicrostructures by Multiple Level Deep X-ray Lithography withSacrificial Metal Layers”. This patent teaches the formation of metalstructure utilizing through mask exposures. A first layer of a primarymetal is electroplated onto an exposed plating base to fill a void in aphotoresist (the photoresist forming a through mask having a desiredpattern of openings), the photoresist is then removed and a secondarymetal is electroplated over the first layer and over the plating base.The exposed surface of the secondary metal is then machined down to aheight which exposes the first metal to produce a flat uniform surfaceextending across both the primary and secondary metals. Formation of asecond layer may then begin by applying a photoresist over the firstlayer and patterning it (i.e. to form a second through mask) and thenrepeating the process that was used to produce the first layer toproduce a second layer of desired configuration. The process is repeateduntil the entire structure is formed and the secondary metal is removedby etching. The photoresist is formed over the plating base or previouslayer by casting and patterning of the photoresist (i.e. voids formed inthe photoresist) are formed by exposure of the photoresist through apatterned mask via X-rays or UV radiation and development of the exposedor unexposed areas.

The '637 patent teaches the locating of a plating base onto a substratein preparation for electroplating materials onto the substrate. Theplating base is indicated as typically involving the use of a sputteredfilm of an adhesive metal, such as chromium or titanium, and then asputtered film of the metal that is to be plated. It is also taught thatthe plating base may be applied over an initial layer of sacrificialmaterial (i.e. a layer or coating of a single material) on the substrateso that the structure and substrate may be detached if desired. In suchcases after formation of the structure the sacrificial material formingpart of each layer of the structure may be removed along with theinitial sacrificial layer to free the structure. Substrate materialsmentioned in the '637 patent include silicon, glass, metals, and siliconwith protected semiconductor devices. A specific example of a platingbase includes about 150 angstroms of titanium and about 300 angstroms ofnickel, both of which are sputtered at a temperature of 160° C. Inanother example, it is indicated that the plating base may consist of150 angstroms of titanium and 150 angstroms of nickel where both areapplied by sputtering.

SUMMARY OF THE DISCLOSURE

According to a first aspect of the disclosure, a counterfeitingdeterrent device is provided with a plurality of layers formed by anadditive process. Each of the layers may have a thickness of less than100 microns. At least one of the layers has a series of indentationsformed in an outer edge of the layer such that the indentations can beobserved to verify that the device originated from a predeterminedsource.

According to another implementation, a counterfeiting deterrent deviceis provided with at least one raised layer having outer edges in theshape of a logo. A light source is configured and arranged to shine alight through a slit in a substrate layer of the device and past anintermediate layer to light up the outer edge of the raised layer. Thelayers of the device are formed by an additive process and have athickness of less than 100 microns each.

The present disclosure provides additional anti-counterfeiting parts andmethods for fabricating such anti-counterfeiting parts from a pluralityof layers of deposited material with each successive layer comprising atleast two materials, at least one of which is a structural material andat least one other of which is a sacrificial material, and wherein eachsuccessive layer defines a successive cross-section of thethree-dimensional part, and wherein the forming of each of the pluralityof successive layers includes: (i) depositing a first of the at leasttwo materials; (ii) depositing a second of the at least two materials;and (B) after the forming of the plurality of successive layers,separating at least a portion of the sacrificial material from thestructural material to reveal the three-dimensional part. In someembodiments each layer is also planarized at least once (e.g. bylapping, CMP, fly cutting, or other machining, chemical, or thermalprocess) to set a boundary level between that layer and a subsequentlayer to be formed.

According to aspects of the disclosure, an improved method is providedfor forming anti-counterfeiting parts, which have visually observablefirst configurations that provide anti-counterfeiting functionality thatis produced by an enabling or barrier technology that is not generallyavailable.

According to aspects of the disclosure, an improved method is providedfor forming anti-counterfeiting parts, which have a visually observablefirst configuration in the presence of reflected light and a visuallyobservable second configuration, which is different from the firstconfiguration, in the presence of light that is transmitted throughpassages within the part wherein one or both the first and secondconfigurations provide an anti-counterfeiting functionality and whereinthe features that yield the first and second configurations are producedby an enabling or barrier technology that is not generally available.

According to aspects of the disclosure, an improved method is providedfor forming anti-counterfeiting parts, which have optical reflectanceproperties or transmission properties relative to an incident light thatare machine readable and provide an anti-counterfeiting functionalitythat is produced by an enabling or barrier technology that is notgenerally available.

According to aspects of the disclosure, an improved method is providedfor forming anti-counterfeiting parts, which have optical reflectanceproperties or transmission properties relative to an incident light thatare provide an anti-counterfeiting functionality in the form ofpredefined interference or diffraction patterns that can be recognizedvisually and/or or by machine by wherein the features that yield thepatterns are produced by an enabling or barrier technology that is notgenerally available.

According to aspects of the disclosure, an improved method is providedfor forming anti-counterfeiting parts, which have optical reflectanceproperties or transmission properties that result in images that can beseen only at selected predefined angles, or distances, or cannot be seenat selected predefined angles, or distances, to provide ananti-counterfeiting functionality wherein the features that provide theimages are produced by an enabling or barrier technology that is notgenerally available.

According to aspects of the disclosure, an improved method is providedfor forming anti-counterfeiting parts, which have optical reflectanceproperties or transmission properties that result in images that have adifferent color or colors than an incident color or colors wherein thefeatures that provide the images are produced by an enabling or barriertechnology that is not generally available.

According to aspects of the disclosure, an improved method is providedfor forming anti-counterfeiting parts, which have imaging propertiesthat are different for different selected radiation wavelengths (e.g.X-ray versus visual) wherein the features that give rise to thedifferent imaging properties are produced by an enabling or barriertechnology that is not generally available.

According to aspects of the disclosure, an improved method is providedfor forming anti-counterfeiting parts, which have image producingproperties that are different in the presence of different stimuli orquantities of stimulus (heating, magnetic fields, electric fields,vibration, movement wherein the features that give rise to thevariations are produced by an enabling or barrier technology that is notgenerally available.

Other aspects of the disclosure will be understood by those of skill inthe art upon review of the teachings herein. Other aspects of thedisclosure may involve combinations of the above noted aspects of thedisclosure. Other aspects of the disclosure may involve apparatus orsystems that can be used in implementing one or more of the above methodaspects of the disclosure. These other aspects of the disclosure mayprovide various combinations of the aspects presented above as well asprovide other configurations, structures, functional relationships, andprocesses that have not been specifically set forth above.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1C schematically depict side views of various stages of a CCmask plating process, while FIGS. 1D-1G schematically depict side viewsof various stages of a CC mask plating process using a different type ofCC mask.

FIGS. 2A-2F schematically depict side views of various stages of anelectrochemical fabrication process as applied to the formation of aparticular structure where a sacrificial material is selectivelydeposited while a structural material is blanket deposited.

FIGS. 3A-3C schematically depict side views of various examplesubassemblies that may be used in manually implementing theelectrochemical fabrication method depicted in FIGS. 2A-2F.

FIGS. 4A-4F schematically depict the formation of a first layer of astructure using adhered mask plating where the blanket deposition of asecond material overlays both the openings between deposition locationsof a first material and the first material itself

FIG. 4G depicts the completion of formation of the first layer resultingfrom planarizing the deposited materials to a desired level.

FIGS. 4H and 4I respectively depict the state of the process afterformation of the multiple layers of the structure and after release ofthe structure from the sacrificial material.

FIG. 5 is a perspective view showing an exemplary anti-counterfeitingstructure attached to a watch face.

FIG. 6 is a perspective view showing an exemplary anti-counterfeitingstructure.

FIG. 7 is a perspective view showing the exemplary anti-counterfeitingstructure of FIG. 6 in partial cross-section.

FIG. 8A is a perspective view showing another exemplaryanti-counterfeiting structure.

FIG. 8B is a perspective view showing the exemplary anti-counterfeitingstructure of FIG. 8A in partial cross-section.

FIG. 8C is a perspective view showing the exemplary anti-counterfeitingstructure of FIG. 8A with a transparent edge portion.

FIG. 9 is a perspective view showing another exemplaryanti-counterfeiting structure, and an inset showing an enlarged view ofan edge portion of the structure.

FIG. 10 is a perspective view showing the exemplary anti-counterfeitingstructure of FIG. 9, and an inset showing an enlarged view of a centerportion of the structure.

FIG. 11 is a perspective view showing the exemplary anti-counterfeitingstructure of FIG. 9.

FIG. 12 is a perspective view showing the exemplary anti-counterfeitingstructure of FIG. 9, and an inset showing an enlarged view of across-section of the center portion of the structure.

FIG. 13 is a perspective view showing a variation of the exemplaryanti-counterfeiting structure of FIG. 9.

FIG. 14 is a perspective view showing the exemplary anti-counterfeitingstructure of FIG. 13 in partial cross-section.

FIG. 15 is a perspective view showing the exemplary anti-counterfeitingstructure of FIG. 9 being used in conjunction with a combined lightsource and detector, and an inset showing an enlarged view of an edgeportion of the anti-counterfeiting structure.

FIG. 16 is an enlarged plan view of an edge portion of theanti-counterfeiting structure of FIG. 9.

FIG. 17 is a perspective view showing the exemplary anti-counterfeitingstructure of FIG. 9 being used in conjunction with a light source andseparate detector.

FIG. 18 is a plan view showing exemplary optical interference patternsthat may be created by embodiments of the disclosure.

FIG. 19 is a perspective view showing another exemplaryanti-counterfeiting system constructed according to aspects of thedisclosure.

FIG. 20 is a perspective view showing a slit pattern of the system ofFIG. 19, and an inset showing an enlarged view of a portion of the slitpattern.

FIGS. 21A-21B are enlarged perspective views similar to FIG. 20depicting motion of a middle section of the slit pattern.

FIG. 22 is a side view showing another exemplary anti-counterfeitingdevice.

FIG. 23 is a side view showing the device of FIG. 22 after beingrotated.

FIG. 24 is a side view showing the device of FIG. 23 after being furtherrotated.

FIG. 25 is a side view showing the device of FIG. 24 after being furtherrotated

FIG. 26 is a side view showing the device of FIG. 23 after beingrotated.

FIG. 27 is a plan view schematically showing the effects of combiningvarious colors.

FIG. 28 is a perspective view showing another exemplaryanti-counterfeiting system.

FIG. 29 is a perspective view showing a transparent version of thesystem of FIG. 28 for clarity of understanding.

FIG. 30 is an enlarged perspective view showing a portion of the systemof FIG. 29.

FIG. 31 is a top view showing another exemplary anti-counterfeitingdevice.

FIG. 32 is a side view showing the device of FIG. 31.

FIG. 33 is a bottom view showing the device of FIG. 31.

FIG. 34 is a top view showing the device of FIG. 31, with an insetshowing an enlarged portion of the device.

FIG. 35 is a side cross-sectional view of the portion of the deviceshown in the inset of FIG. 34.

FIG. 36 is a bottom view of the portion of the device shown in the insetof FIG. 34.

FIG. 37 is an oblique view of the portion of the device shown in theinset of FIG. 34.

FIG. 38 is a cross-sectional view of the portion of the device shown inFIG. 37, with an inset showing an enlarged portion of the cross-section.

FIG. 39 is a cross-sectional view showing a portion of the device asindicated in FIG. 38.

FIG. 40 is a cross-sectional view similar to FIG. 39 with light pathsadded.

FIG. 41 is a cross-sectional view similar to FIG. 40 showing a directlighting configuration.

FIG. 42 is a cross-sectional view similar to FIG. 40 showing an indirectlighting configuration.

FIG. 43 is a perspective view showing another exemplaryanti-counterfeiting system constructed according to aspects of thedisclosure.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Electrochemical Fabrication in General

FIGS. 1A-1G, 2A -2F, and 3A-3C illustrate various features of one formof electrochemical fabrication. Other electrochemical fabricationtechniques are set forth in the '630 patent referenced above, in thevarious previously incorporated publications, in various other patentsand patent applications incorporated herein by reference. Still othersmay be derived from combinations of various approaches described inthese publications, patents, and applications, or are otherwise known orascertainable by those of skill in the art from the teachings set forthherein. All of these techniques may be combined with those of thevarious embodiments of various aspects of the invention to yieldenhanced embodiments. Still other embodiments may be derived fromcombinations of the various embodiments explicitly set forth herein.

FIGS. 4A-4I illustrate side views of various states in an alternativemulti-layer, multi-material electrochemical fabrication process. FIGS.4A-4G illustrate various stages in the formation of a single layer of amulti-layer fabrication process where a second metal is deposited on afirst metal as well as in openings in the first metal so that the firstand second metal form part of the layer. In FIG. 4A a side view of asubstrate 82 having a surface 88 is shown, onto which patternablephotoresist 84 is cast as shown in FIG. 4B. In FIG. 4C, a pattern ofresist is shown that results from the curing, exposing, and developingof the resist. The patterning of the photoresist 84 results in openingsor apertures 92(a)-92(c) extending from a surface 86 of the photoresistthrough the thickness of the photoresist to surface 88 of the substrate82. In FIG. 4D a metal 94 (e.g. nickel) is shown as having beenelectroplated into the openings 92(a)-92(c). In FIG. 4E the photoresisthas been removed (i.e. chemically stripped) from the substrate to exposeregions of the substrate 82 which are not covered with the first metal94. In FIG. 4F a second metal 96 (e.g. silver) is shown as having beenblanket electroplated over the entire exposed portions of the substrate82 (which is conductive) and over the first metal 94 (which is alsoconductive). FIG. 4G depicts the completed first layer of the structurewhich has resulted from the planarization of the first and second metalsdown to a height that exposes the first metal and sets a thickness forthe first layer. In FIG. 4H the result of repeating the process stepsshown in FIGS. 4B-4G several times to form a multi-layer structure isshown where each layer consists of two materials. For most applications,one of these materials is removed as shown in FIG. 4I to yield a desired3-D structure 98 (e.g. component or device).

Various embodiments of various aspects of the invention are directed toformation of three-dimensional structures from materials some, or all,of which may be electrodeposited (as illustrated in FIGS. 1A-4I) orelectroless deposited. Some of these structures may be formed from asingle build level formed from one or more deposited materials whileothers are formed from a plurality of build layers each including atleast two materials (e.g. two or more layers, more preferably five ormore layers, and most preferably ten or more layers). In someembodiments, layer thicknesses may be as small as one micron or as largeas fifty microns. In other embodiments, thinner layers may be used whilein other embodiments, thicker layers may be used. In some embodimentsstructures having features positioned with micron level precision andminimum features size on the order of tens of microns are to be formed.In other embodiments structures with less precise feature placementand/or larger minimum features may be formed. In still otherembodiments, higher precision and smaller minimum feature sizes may bedesirable. In the present application meso-scale and millimeter-scalehave the same meaning and refer to devices that may have one or moredimensions extending into the 0.5-20 millimeter range, or somewhatlarger and with features positioned with precision in the 0.1-10 micronrange and with minimum features sizes on the order of 1-100 microns.

The various embodiments, alternatives, and techniques disclosed hereinmay form multi-layer structures using a single patterning technique onall layers or using different patterning techniques on different layers.For example, various embodiments of the invention may perform selectivepatterning operations using conformable contact masks and maskingoperations (i.e. operations that use masks which are contacted to butnot adhered to a substrate), proximity masks and masking operations(i.e. operations that use masks that at least partially selectivelyshield a substrate by their proximity to the substrate even if contactis not made), non-conformable masks and masking operations (i.e. masksand operations based on masks whose contact surfaces are notsignificantly conformable), and/or adhered masks and masking operations(masks and operations that use masks that are adhered to a substrateonto which selective deposition or etching is to occur as opposed toonly being contacted to it). Conformable contact masks, proximity masks,and non-conformable contact masks share the property that they arepreformed and brought to, or in proximity to, a surface which is to betreated (i.e. the exposed portions of the surface are to be treated).These masks can generally be removed without damaging the mask or thesurface that received treatment to which they were contacted, or locatedin proximity to. Adhered masks are generally formed on the surface to betreated (i.e. the portion of that surface that is to be masked) andbonded to that surface such that they cannot be separated from thatsurface without being completely destroyed or damaged beyond any pointof reuse. Adhered masks may be formed in a number of ways including (1)by application of a photoresist, selective exposure of the photoresist,and then development of the photoresist, (2) selective transfer ofpre-patterned masking material, and/or (3) direct formation of masksfrom computer controlled depositions of material.

Patterning operations may be used in selectively depositing materialand/or may be used in the selective etching of material. Selectivelyetched regions may be selectively filled in or filled in via blanketdeposition, or the like, with a different desired material. In someembodiments, the layer-by-layer build up may involve the simultaneousformation of portions of multiple layers. In some embodiments,depositions made in association with some layer levels may result indepositions to regions associated with other layer levels (i.e. regionsthat lie within the top and bottom boundary levels that define adifferent layer's geometric configuration). Such use of selectiveetching and interlaced material deposition in association with multiplelayers is described in U.S. patent application Ser. No. 10/434,519, bySmalley, now U.S. Pat. No. 7,252,861, and entitled “Methods of andApparatus for Electrochemically Fabricating Structures Via InterlacedLayers or Via Selective Etching and Filling of Voids” which is herebyincorporated herein by reference as if set forth in full.

Temporary substrates on which structures may be formed may be of thesacrificial-type (i.e. destroyed or damaged during separation ofdeposited materials to the extent they cannot be reused),non-sacrificial-type (i.e. not destroyed or excessively damaged, i.e.not damaged to the extent they may not be reused, e.g. with asacrificial or release layer located between the substrate and theinitial layers of a structure that is formed). Non-sacrificialsubstrates may be considered reusable, with little or no rework (e.g.replanarizing one or more selected surfaces or applying a release layer,and the like) though they may or may not be reused for a variety ofreasons.

Definitions

This section of the specification is intended to set forth definitionsfor a number of specific terms that may be useful in describing thesubject matter of the various embodiments of the invention. It isbelieved that the meanings of most if not all of these terms is clearfrom their general use in the specification but they are set forthhereinafter to remove any ambiguity that may exist. It is intended thatthese definitions be used in understanding the scope and limits of anyclaims that use these specific terms. As far as interpretation of theclaims of this patent disclosure are concerned, it is intended thatthese definitions take presence over any contradictory definitions orallusions found in any materials which are incorporated herein byreference.

“Build” as used herein refers, as a verb, to the process of building adesired structure (or part) or plurality of structures (or parts) from aplurality of applied or deposited materials which are stacked andadhered upon application or deposition or, as a noun, to the physicalstructure (or part) or structures (or parts) formed from such a process.Depending on the context in which the term is used, such physicalstructures may include a desired structure embedded within a sacrificialmaterial or may include only desired physical structures which may beseparated from one another or may require dicing and/or slicing to causeseparation.

“Build axis” or “build orientation” is the axis or orientation that issubstantially perpendicular to substantially planar levels of depositedor applied materials that are used in building up a structure. Theplanar levels of deposited or applied materials may be or may not becompletely planar but are substantially so in that the overall extent oftheir cross-sectional dimensions are significantly greater than theheight of any individual deposit or application of material (e.g. 100,500, 1000, 5000, or more times greater). The planar nature of thedeposited or applied materials may come about from use of a process thatleads to planar deposits or it may result from a planarization process(e.g. a process that includes mechanical abrasion, e.g. lapping, flycutting, grinding, or the like) that is used to remove material regionsof excess height. Unless explicitly noted otherwise, “vertical” as usedherein refers to the build axis or nominal build axis (if the layers arenot stacking with perfect registration) while “horizontal” refers to adirection within the plane of the layers (i.e. the plane that issubstantially perpendicular to the build axis).

“Build layer” or “layer of structure” as used herein does not refer to adeposit of a specific material but instead refers to a region of a buildlocated between a lower boundary level and an upper boundary level whichgenerally defines a single cross-section of a structure being formed orstructures which are being formed in parallel. Depending on the detailsof the actual process used to form the structure, build layers aregenerally formed on and adhered to previously formed build layers. Insome processes the boundaries between build layers are defined byplanarization operations which result in successive build layers beingformed on substantially planar upper surfaces of previously formed buildlayers. In some embodiments, the substantially planar upper surface ofthe preceding build layer may be textured to improve adhesion betweenthe layers. In other build processes, openings may exist in or be formedin the upper surface of a previous but only partially formed buildlayers such that the openings in the previous build layers are filledwith materials deposited in association with current build layers whichwill cause interlacing of build layers and material deposits. Suchinterlacing is described in U.S. patent application Ser. No. 10/434,519now U.S. Pat. No. 7,252,861. This referenced application is incorporatedherein by reference as if set forth in full. In most embodiments, abuild layer includes at least one primary structural material and atleast one primary sacrificial material. However, in some embodiments,two or more primary structural materials may be used without a primarysacrificial material (e.g. when one primary structural material is adielectric and the other is a conductive material). In some embodiments,build layers are distinguishable from each other by the source of thedata that is used to yield patterns of the deposits, applications,and/or etchings of material that form the respective build layers. Forexample, data descriptive of a structure to be formed which is derivedfrom data extracted from different vertical levels of a datarepresentation of the structure define different build layers of thestructure. The vertical separation of successive pairs of suchdescriptive data may define the thickness of build layers associatedwith the data. As used herein, at times, “build layer” may be looselyreferred simply as “layer”. In many embodiments, deposition thickness ofprimary structural or sacrificial materials (i.e. the thickness of anyparticular material after it is deposited) is generally greater than thelayer thickness and a net deposit thickness is set via one or moreplanarization processes which may include, for example, mechanicalabrasion (e.g. lapping, fly cutting, polishing, and the like) and/orchemical etching (e.g. using selective or non-selective etchants). Thelower boundary and upper boundary for a build layer may be set anddefined in different ways. From a design point of view they may be setbased on a desired vertical resolution of the structure (which may varywith height). From a data manipulation point of view, the vertical layerboundaries may be defined as the vertical levels at which datadescriptive of the structure is processed or the layer thickness may bedefined as the height separating successive levels of cross-sectionaldata that dictate how the structure will be formed. From a fabricationpoint of view, depending on the exact fabrication process used, theupper and lower layer boundaries may be defined in a variety ofdifferent ways. For example by planarization levels or effectiveplanarization levels (e.g. lapping levels, fly cutting levels, chemicalmechanical polishing levels, mechanical polishing levels, verticalpositions of structural and/or sacrificial materials after relativelyuniform etch back following a mechanical or chemical mechanicalplanarization process). For example, by levels at which process steps oroperations are repeated. At levels at which, at least theoretically,lateral extends of structural material can be changed to define newcross-sectional features of a structure.

“Layer thickness” is the height along the build axis between a lowerboundary of a build layer and an upper boundary of that build layer.

“Planarization” is a process that tends to remove materials, above adesired plane, in a substantially non-selective manner such that alldeposited materials are brought to a substantially common height ordesired level (e.g. within 20%, 10%, 5%, or even 1% of a desired layerboundary level). For example, lapping removes material in asubstantially non-selective manner though some amount of recession ofone material or another may occur (e.g. copper may recess relative tonickel). Planarization may occur primarily via mechanical means, e.g.lapping, grinding, fly cutting, milling, sanding, abrasive polishing,frictionally induced melting, other machining operations, or the like(i.e. mechanical planarization). Mechanical planarization may befollowed or preceded by thermally induced planarization (e.g. melting)or chemically induced planarization (e.g. etching). Planarization mayoccur primarily via a chemical and/or electrical means (e.g. chemicaletching, electrochemical etching, or the like). Planarization may occurvia a simultaneous combination of mechanical and chemical etching (e.g.chemical mechanical polishing (CMP)).

“Structural material” as used herein refers to a material that remainspart of the structure when put into use.

“Supplemental structural material” as used herein refers to a materialthat forms part of the structure when the structure is put to use but isnot added as part of the build layers but instead is added to aplurality of layers simultaneously (e.g. via one or more coatingoperations that applies the material, selectively or in a blanketfashion, to one or more surfaces of a desired build structure that hasbeen released from a sacrificial material.

“Primary structural material” as used herein is a structural materialthat forms part of a given build layer and which is typically depositedor applied during the formation of that build layer and which makes upmore than 20% of the structural material volume of the given buildlayer. In some embodiments, the primary structural material may be thesame on each of a plurality of build layers or it may be different ondifferent build layers. In some embodiments, a given primary structuralmaterial may be formed from two or more materials by the alloying ordiffusion of two or more materials to form a single material.

“Secondary structural material” as used herein is a structural materialthat forms part of a given build layer and is typically deposited orapplied during the formation of the given build layer but is not aprimary structural material as it individually accounts for only a smallvolume of the structural material associated with the given layer. Asecondary structural material will account for less than 20% of thevolume of the structural material associated with the given layer. Insome preferred embodiments, each secondary structural material mayaccount for less than 10%, 5%, or even 2% of the volume of thestructural material associated with the given layer. Examples ofsecondary structural materials may include seed layer materials,adhesion layer materials, barrier layer materials (e.g. diffusionbarrier material), and the like. These secondary structural materialsare typically applied to form coatings having thicknesses less than 2microns, 1 micron, 0.5 microns, or even 0.2 microns. The coatings may beapplied in a conformal or directional manner (e.g. via CVD, PVD,electroless deposition, or the like). Such coatings may be applied in ablanket manner or in a selective manner. Such coatings may be applied ina planar manner (e.g. over previously planarized layers of material) astaught in U.S. patent application Ser. No. 10/607,931, now U.S. Pat. No.7,239,219. In other embodiments, such coatings may be applied in anon-planar manner, for example, in openings in and over a patternedmasking material that has been applied to previously planarized layersof material as taught in U.S. patent application Ser. No. 10/841,383,now U.S. Pat. No. 7,195,989. These referenced applications areincorporated herein by reference as if set forth in full herein.

“Functional structural material” as used herein is a structural materialthat would have been removed as a sacrificial material but for itsactual or effective encapsulation by other structural materials.Effective encapsulation refers, for example, to the inability of anetchant to attack the functional structural material due toinaccessibility that results from a very small area of exposure and/ordue to an elongated or tortuous exposure path. For example, large(10,000 μm²) but thin (e.g. less than 0.5 microns) regions ofsacrificial copper sandwiched between deposits of nickel may defineregions of functional structural material depending on ability of arelease etchant to remove the sandwiched copper.

“Sacrificial material” is material that forms part of a build layer butis not a structural material. Sacrificial material on a given buildlayer is separated from structural material on that build layer afterformation of that build layer is completed and more generally is removedfrom a plurality of layers after completion of the formation of theplurality of layers during a “release” process that removes the bulk ofthe sacrificial material or materials. In general sacrificial materialis located on a build layer during the formation of one, two, or moresubsequent build layers and is thereafter removed in a manner that doesnot lead to a planarized surface. Materials that are applied primarilyfor masking purposes, i.e. to allow subsequent selective deposition oretching of a material, e.g. photoresist that is used in forming a buildlayer but does not form part of the build layer) or that exist as partof a build for less than one or two complete build layer formationcycles are not considered sacrificial materials as the term is usedherein but instead shall be referred as masking materials or astemporary materials. These separation processes are sometimes referredto as a release process and may or may not involve the separation ofstructural material from a build substrate. In many embodiments,sacrificial material within a given build layer is not removed until allbuild layers making up the three-dimensional structure have been formed.Of course sacrificial material may be, and typically is, removed fromabove the upper level of a current build layer during planarizationoperations during the formation of the current build layer. Sacrificialmaterial is typically removed via a chemical etching operation but insome embodiments may be removed via a melting operation orelectrochemical etching operation. In typical structures, the removal ofthe sacrificial material (i.e. release of the structural material fromthe sacrificial material) does not result in planarized surfaces butinstead results in surfaces that are dictated by the boundaries ofstructural materials located on each build layer. Sacrificial materialsare typically distinct from structural materials by having differentproperties therefrom (e.g. chemical etchability, hardness, meltingpoint, etc.) but in some cases, as noted previously, what would havebeen a sacrificial material may become a structural material by itsactual or effective encapsulation by other structural materials.Similarly, structural materials may be used to form sacrificialstructures that are separated from a desired structure during a releaseprocess via the sacrificial structures being only attached tosacrificial material or potentially by dissolution of the sacrificialstructures themselves using a process that is insufficient to reachstructural material that is intended to form part of a desiredstructure. It should be understood that in some embodiments, smallamounts of structural material may be removed, after or during releaseof sacrificial material. Such small amounts of structural material mayhave been inadvertently formed due to imperfections in the fabricationprocess or may result from the proper application of the process but mayresult in features that are less than optimal (e.g. layers with stairssteps in regions where smooth sloped surfaces are desired. In such casesthe volume of structural material removed is typically minusculecompared to the amount that is retained and thus such removal is ignoredwhen labeling materials as sacrificial or structural. Sacrificialmaterials are typically removed by a dissolution process, or the like,that destroys the geometric configuration of the sacrificial material asit existed on the build layers. In many embodiments, the sacrificialmaterial is a conductive material such as a metal. As will be discussedhereafter, masking materials though typically sacrificial in nature arenot termed sacrificial materials herein unless they meet the requireddefinition of sacrificial material.

“Supplemental sacrificial material” as used herein refers to a materialthat does not form part of the structure when the structure is put touse and is not added as part of the build layers but instead is added toa plurality of layers simultaneously (e.g. via one or more coatingoperations that applies the material, selectively or in a blanketfashion, to a one or more surfaces of a desired build structure that hasbeen released from an initial sacrificial material. This supplementalsacrificial material will remain in place for a period of time and/orduring the performance of certain post layer formation operations, e.g.to protect the structure that was released from a primary sacrificialmaterial, but will be removed prior to putting the structure to use.

“Primary sacrificial material” as used herein is a sacrificial materialthat is located on a given build layer and which is typically depositedor applied during the formation of that build layer and which makes upmore than 20% of the sacrificial material volume of the given buildlayer. In some embodiments, the primary sacrificial material may be thesame on each of a plurality of build layers or may be different ondifferent build layers. In some embodiments, a given primary sacrificialmaterial may be formed from two or more materials by the alloying ordiffusion of two or more materials to form a single material.

“Secondary sacrificial material” as used herein is a sacrificialmaterial that is located on a given build layer and is typicallydeposited or applied during the formation of the build layer but is nota primary sacrificial materials as it individually accounts for only asmall volume of the sacrificial material associated with the givenlayer. A secondary sacrificial material will account for less than 20%of the volume of the sacrificial material associated with the givenlayer. In some preferred embodiments, each secondary sacrificialmaterial may account for less than 10%, 5%, or even 2% of the volume ofthe sacrificial material associated with the given layer. Examples ofsecondary structural materials may include seed layer materials,adhesion layer materials, barrier layer materials (e.g. diffusionbarrier material), and the like. These secondary sacrificial materialsare typically applied to form coatings having thicknesses less than 2microns, 1 micron, 0.5 microns, or even 0.2 microns). The coatings maybe applied in a conformal or directional manner (e.g. via CVD, PVD,electroless deposition, or the like). Such coatings may be applied in ablanket manner or in a selective manner. Such coatings may be applied ina planar manner (e.g. over previously planarized layers of material) astaught in U.S. patent application Ser. No. 10/607,931, now U.S. Pat. No.7,239,219. In other embodiments, such coatings may be applied in anon-planar manner, for example, in openings in and over a patternedmasking material that has been applied to previously planarized layersof material as taught in U.S. patent application Ser. No. 10/841,383,now U.S. Pat. No. 7,195,989. These referenced applications areincorporated herein by reference as if set forth in full herein.

“Adhesion layer”, “seed layer”, “barrier layer”, and the like refer tocoatings of material that are thin in comparison to the layer thicknessand thus generally form secondary structural material portions orsacrificial material portions of some layers. Such coatings may beapplied uniformly over a previously formed build layer, they may beapplied over a portion of a previously formed build layer and overpatterned structural or sacrificial material existing on a current (i.e.partially formed) build layer so that a non-planar seed layer results,or they may be selectively applied to only certain locations on apreviously formed build layer. In the event such coatings arenon-selectively applied, selected portions may be removed (1) prior todepositing either a sacrificial material or structural material as partof a current layer or (2) prior to beginning formation of the next layeror they may remain in place through the layer build up process and thenetched away after formation of a plurality of build layers.

“Masking material” is a material that may be used as a tool in theprocess of forming a build layer but does not form part of that buildlayer. Masking material is typically a photopolymer or photoresistmaterial or other material that may be readily patterned. Maskingmaterial is typically a dielectric. Masking material, though typicallysacrificial in nature, is not a sacrificial material as the term is usedherein. Masking material is typically applied to a surface during theformation of a build layer for the purpose of allowing selectivedeposition, etching, or other treatment and is removed either during theprocess of forming that build layer or immediately after the formationof that build layer.

“Multilayer structures” are structures formed from multiple build layersof deposited or applied materials.

“Multilayer three-dimensional (or 3D or 3-D) structures” are MultilayerStructures that meet at least one of two criteria: (1) the structuralmaterial portion of at least two layers of which one has structuralmaterial portions that do not overlap structural material portions ofthe other.

“Complex multilayer three-dimensional (or 3D or 3-D) structures” aremultilayer three-dimensional structures formed from at least threelayers where a line may be defined that hypothetically extendsvertically through at least some portion of the build layers of thestructure will extend from structural material through sacrificialmaterial and back through structural material or will extend fromsacrificial material through structural material and back throughsacrificial material (these might be termed vertically complexmultilayer three-dimensional structures). Alternatively, complexmultilayer three-dimensional structures may be defined as multilayerthree-dimensional structures formed from at least two layers where aline may be defined that hypothetically extends horizontally through atleast some portion of a build layer of the structure that will extendfrom structural material through sacrificial material and back throughstructural material or will extend from sacrificial material throughstructural material and back through sacrificial material (these mightbe termed horizontally complex multilayer three-dimensional structures).Worded another way, in complex multilayer three-dimensional structures,a vertically or horizontally extending hypothetical line will extendfrom one or structural material or void (when the sacrificial materialis removed) to the other of void or structural material and then back tostructural material or void as the line is traversed along at least aportion of the line.

“Moderately complex multilayer three-dimensional (or 3D or 3-D)structures are complex multilayer 3D structures for which thealternating of void and structure or structure and void not only existsalong one of a vertically or horizontally extending line but along linesextending both vertically and horizontally.

“Highly complex multilayer (or 3D or 3-D) structures are complexmultilayer 3D structures for which the structure-to-void-to-structure orvoid-to-structure-to-void alternating occurs once along the line butoccurs a plurality of times along a definable horizontally or verticallyextending line.

“Up-facing feature” is an element dictated by the cross-sectional datafor a given build layer “n” and a next build layer “n+1” that is to beformed from a given material that exists on the build layer “n” but doesnot exist on the immediately succeeding build layer “n+1”. Forconvenience the term “up-facing feature” will apply to such featuresregardless of the build orientation.

“Down-facing feature” is an element dictated by the cross-sectional datafor a given build layer “n” and a preceding build layer “n−1” that is tobe formed from a given material that exists on build layer “n” but doesnot exist on the immediately preceding build layer “n−1”. As withup-facing features, the term “down-facing feature” shall apply to suchfeatures regardless of the actual build orientation.

“Continuing region” is the portion of a given build layer “n” that isdictated by the cross-sectional data for the given build layer “n”, anext build layer “n+1” and a preceding build layer “n−1” that is neitherup-facing nor down-facing for the build layer “n”.

“Minimum feature size” or “MFS” refers to a necessary or desirablespacing between structural material elements on a given layer that areto remain distinct in the final device configuration. If the minimumfeature size is not maintained for structural material elements on agiven layer, the fabrication process may result in structural materialinadvertently bridging what were intended to be two distinct elements(e.g. due to masking material failure or failure to appropriately fillvoids with sacrificial material during formation of the given layer suchthat during formation of a subsequent layer structural materialinadvertently fills the void). More care during fabrication can lead toa reduction in minimum feature size. Alternatively, a willingness toaccept greater losses in productivity (i.e. lower yields) can result ina decrease in the minimum feature size. However, during fabrication fora given set of process parameters, inspection diligence, and yield(successful level of production) a minimum design feature size is set inone way or another. The above described minimum feature size may moreappropriately be termed minimum feature size of gaps or voids (e.g. theMFS for sacrificial material regions when sacrificial material isdeposited first). Conversely a minimum feature size for structurematerial regions (minimum width or length of structural materialelements) may be specified. Depending on the fabrication method andorder of deposition of structural material and sacrificial material, thetwo types of minimum feature sizes may be the same or different. Inpractice, for example, using electrochemical fabrication methods asdescribed herein, the minimum features size on a given layer may beroughly set to a value that approximates the layer thickness used toform the layer and it may be considered the same for both structural andsacrificial material widths. In some more rigorously implementedprocesses (e.g. with higher examination regiments and tolerance forrework), it may be set to an amount that is 80%, 50%, or even 30% of thelayer thickness. Other values or methods of setting minimum featuresizes may be used. Worded another way, depending on the geometry of astructure, or plurality of structures, being formed, the structure, orstructures, may include elements (e.g. solid regions) which havedimensions smaller than a first minimum feature size and/or havespacings, voids, openings, or gaps (e.g. hollow or empty regions)located between elements, where the spacings are smaller than a secondminimum feature size where the first and second minimum feature sizesmay be the same or different and where the minimum feature sizesrepresent lower limits at which formation of elements and/or spacing canbe reliably formed. Reliable formation refers to the ability toaccurately form or produce a given geometry of an element, or of thespacing between elements, using a given formation process, with aminimum acceptable yield. The minimum acceptable yield may depend on anumber of factors including: (1) number of features present per layer,(2) numbers of layers, (3) the criticality of the successful formationof each feature, (4) the number and severity of other factors effectingoverall yield, and (5) the desired or required overall yield for thestructures or devices themselves. In some circumstances, the minimumsize may be determined by a yield requirement per feature which is aslow as 70%, 60%, or even 50%. While in other circumstances the yieldrequirement per feature may be as high as 90%, 95%, 99%, or even higher.In some circumstances (e.g. in producing a filter element) the failureto produce a certain number of desired features (e.g. 20-40% failure maybe acceptable while in an electrostatic actuator the failure to producea single small space between two moveable electrodes may result infailure of the entire device. The MFS, for example, may be defined asthe minimum width of a narrow and processing element (e.g. photoresistelement or sacrificial material element) or structural element (e.g.structural material element) that may be reliably formed (e.g. 90-99.9times out of 100) which is either independent of any wider structures orhas a substantial independent length (e.g. 200-1000 microns) beforeconnecting to a wider region.

Anti-Counterfeiting Devices

Anti-counterfeiting parts or devices produced by the methods of thepresent application may take a number of different forms and may beincorporated into a variety of products or other devices. Some suchparts may have only non-movable passive elements while others may havemovable elements. Still others may have active elements. Parts may haveauthentication elements that are visually detectable, non-visuallydetectable, or both. Some visually detectable elements include logos(e.g. micro-logos), company names, part numbers, serial numbers, orother meaningful structural configurations. In some embodiments,interrogation of the structural configuration is by optical means (e.g.light) and may include analysis of light exiting a surface that resultsfrom incident radiation coming from the same side as an observer. Insome embodiments incident radiation may come from a side or backsiderelative to the exiting light direction. Some devices in which the partsare incorporated may include their own forward, side or backlightingsources while other devices may not. Some parts may include their ownlight sources and even possibly power sources. Some example electronicdevices that may make use of the anti-counterfeiting parts of some ofthe embodiments of the present disclosure include, for example: cellphones, handheld game systems, laptops, tablet computers, key fobs, GPSsystems, hand held music and video systems, and other electronicdevices. Some exemplary generally non-electronic devices that may makeuse of the anti-counterfeiting parts of some of the embodiments of thepresent disclosure include: jewelry, watches, pens, art works, high endparts for the aerospace industry, cars, medical devices,pharmaceuticals, military equipment, documents, brief cases, and thelike.

In some embodiments, the anti-counterfeit parts are incorporated intothe product or device itself, attached to the product or device (e.g.via welding), incorporated into device packaging, etc.

As an example, approximately 14 million watches sold in 2007 werecounterfeits of Swiss watches. This illustrates a need in the high-endwatch industry for watches to include elements which are very difficultto duplicate and which therefore make counterfeiting of the watch moredifficult. Such elements are preferably visible on the surface of thewatch on or near the face, beneath the watch's crystal (the transparentcover that protects the watch face) so that they are readily observableto the purchaser or dealer of the watch, either with the naked eye orusing moderate magnification. However, in some applications either inaddition to such visible indicators or as an alternative to such visibleindicators, machine readable optical or other output may be extractedfrom the device to yield an authenticity indicator or a counterfeitconclusion.

In some embodiments of the disclosure, a static structure 100 producedfrom multiple layers of metal using a multi-layer multi-materialfabrication technology such as those described herein or incorporatedherein by reference is provided; this may be located anywhere on thedevice to be authenticated (e.g. watch), such as on the face 102 of thewatch 104 of FIG. 5. The structure may include any complex 3-D geometrythat would be difficult or impossible to fabricate other than by using amulti-layer, metal 3-D process capable of small features (e.g., layerthicknesses in the range of 4-30 μm, minimum features in the range of10-20 μm or less) with resolution on the order of 2-3 microns or less.In some embodiments, the layer thicknesses may be a large as 100 μm. Theexemplary anti-counterfeiting structure 100 shown in FIG. 5. representsthe logo of the Swiss watch company Parmigiani Fleurier as anillustrative example only. The MFI logo shown in FIGS. 6 and 7 could beused instead in FIG. 5.

As shown in FIG. 6 and FIG. 7, the geometry of an anti-counterfeitstructure 110 may include alphanumeric characters or other characterelements 112, geometric elements 114, logos (such as the MFI logo of theapplicant shown formed by character elements 112) and/or backgroundelements 116 which form a backdrop or visual contrast with otherelements. The structure preferably not only provides ananti-counterfeiting function, but also contributes aesthetically to thedevice's appearance and, particularly if made of precious materials suchas gold, platinum, or palladium, also to the device's value.

FIGS. 6-7 provide an example of a part with character elements 112corresponding to the letters “MFI”, as well as a circular geometricelement 114 and background elements 116 having the form of parallelstrips with various orientations at different heights within thestructure. The character elements 112 may be replicated on multipletiers 124 separated by background elements 116, as best seen in thecross-section of FIG. 7.

In some embodiments, dynamic parts may be used for anti-counterfeitingand/or for aesthetics or enjoyment of the structure in itself. Suchdynamic parts may include one or more components capable of movingindependently, relative to one another or relative to the body of thedevice. Motion may be induced inertially, by shaking the device, by theaction of magnetic forces (if the part has magnetic elements) generatedby electromagnets or moving permanent magnets within or external to thedevice, heating or cooling, electric fields, and the like. In someembodiments movement may be initiated by power sources or mechanisms ina device itself. For example, an array of tiny vertical pins which arefree to pivot may be suspended above a gear or other rotating element ofa watch movement, with the upper portions of the pins visible on thewatch face. The gear may be furnished with a protrusion which canlightly “brush” the pins as it traverses across their bottom ends,causing a visible motion of the upper portion of the pins. In someembodiments, a frame suspended by co-fabricated springs contains pins orother small objects that can move when the frame is vibrated. In somecases, e.g. in a watch, a moving protrusion can contact the frameperiodically (e.g., once per minute), setting it into vibration andcausing a visual display that indicates the passage of time whiledemonstrating that the watch is authentic and not counterfeited. In someembodiments, in lieu of pins, an array of small mirrors may be provided,and in other embodiments both pins and mirrors may be provided.

Numerous other static or dynamic structures may be formed as desired toserve the purpose of providing anti-counterfeiting protection. In someembodiments the anti-counterfeiting structures may provide no functionother than that of identification while in other embodiments, thestructures may provide identification in combination with otherfunctionality.

In some embodiments, a device (e.g. a watch) may include micro-meshes,grills, or similar structures made using a multi-layer, multi-materialfabrication process, which provide protection of device components whileallowing the mechanism to be observed through such structures. In someembodiments, portions of the mechanism may be mounted to thesestructures for stability. In some embodiments, the multi-layermulti-material fabrication process may be used to fabricate keystructural elements of the device as well as of an authentication part.In some embodiments, the multi-layer, multi-material fabrication processmay be used to provide filigree or other decorative elements, ormounting structures, including small snap-in structures provided withsprings, into which precious stones may be set. Such elements may alsobe applied to jewelry, such as rings, earrings, brooches, bracelets, andnecklaces.

In some embodiments, a multi-layer, multi-material fabrication processmay be used to provide functional components of devices (e.g. componentsof watch movements or even entire movements without need for furtherassembly). Miniature movements can be useful in complicated watcheswhich display multiple time zones, calendar functions, barometricreadings, etc. Anti-counterfeiting parts may be made monolithically, andsometimes even associated devices or device components made at the sametime. Parts may include visual display elements with static features,passive but transformable features, driven features or the like (e.g.logos, moving watch hands, dials, or miniature automata, e.g. animatedfigures of humans and animals). In some embodiments the visual displaysmay provide images that are visible from reflected light, from backlighting, from mixing different colors of light, from the interferenceor diffraction of coherent or correlated light sources, or the like. Insome devices, optical elements may be located in relation to themulti-layer parts to provide enhanced viewing or light management. Insome embodiments the authentication parts may include multiple distinctmaterials and voids that may be visually distinguished by an observer,buried and observable only as a result of manipulations of incidentvisual light or other radiation (e.g. X-rays). Parts may include sidewalls or internal features that provide for light, other radiation, orother stimulus manipulation and may include different materials ortextures that provide for further light, other radiation, or otherstimulus manipulation (e.g. embedded materials, embedded cavities,textured surfaces, polished surfaces, channels, sidewall features,moveable elements, and the like).

In some embodiments, parts may be provided with structural features thatinteract with appropriate stimulus to provide for viewable and humaninterpretable results (e.g. visual images) while in other embodimentsresults of stimulus may require a machine for reading and accurateinterpretation (such as a photocell, bar code reader, CCD array,computer programmed for image recognition and identification). Whenlight or other stimulus interacts with these unique features, a codedresponse is returned. In the case of the stimulus being ambient ordirected light, the reflected, transmitted, or modified light comingfrom the part may be detected by the human eye, camera or otherdetection device where the response may be converted to a digital oranalog output for further analysis. In the case of other stimulus, otherresponses may result. For example, pressure applied to a part containinga piezoelectric element or array of piezoelectric elements might providea voltage or array of voltage responses which may be indicative of theauthenticity of the part and associated device. Application of X-rays tothe part might show hidden features indicative of the authenticity orthe part where the hidden features may be in the form of buriedmaterials or hollow regions. Application of static or dynamic magneticor electric fields to a part that includes permanent magnets,diamagnetic materials or paramagnetic materials, dielectric materials,and/or conductive materials for predefined conductive paths mightprovide detectable characteristics indicative of the authenticity of theparts and associated devices.

In some embodiments, features on layer edges are used to provideauthentication. Such features may be used as part of a logo. As shown inFIGS. 8A-8C, undercutting features 138 and channels 140 may be utilized.Such features can leave a face surface 142 unblemished while stillproviding useful authentication information. Such features can be usedin combination with recessed alphanumeric characters 144 or symbols 146as shown, and/or these characters or symbols may be raised above surface142 rather than recessed into it. These features can take the form ofunder cuts in the surface of one layer that is located between two otherlayers. Such features can receive incident light and by controlling thenumber, width, height and depth of these features, a unique signaturecan be deciphered from the reflectance of the light from the surfacewhich can be detected by a person, photocell, barcode reader, or thelike and decoding performed to determine authenticity. An edge feature140 may be an undercut within a layer either below one layer or betweentwo layers. Depending on the shape of the feature it may provide forspecular reflectance, diffuse reflectance, partial absorption, and/orpassage of light. Edge features may be on outer surfaces of parts or mayform internal passages with dead ends, splits, mergers, internal angledreflective surfaces, even or odd numbers of reflections, one or moreexist ports, one or more input ports, and the like. Depending onlocations, different edge features (and internal passages), may besubjected to different sources of light with different output results.Various edge features are possible including (1) Random, (2)Checkerboard, (3) Chevrons, (4) Stair steps, (5) Barcodes, (6) MorseCode, (7) Binary codes, (8) Custom codes, (9) proprietary codes, and thelike.

Edge features can be on the outer surfaces of the layers or on internalsurfaces of layers. They can act as conduits for light and can allowlight to enter and reemerge through an opening which is the same as theentry port, different from the entry port, either straight cut or setwith a ledge forming an undercut. Adding to the complexity of theoverall light path from input to output, unique micro optical systemscan be created using the versatility of a multi-material electrochemicalfabrication process. In some embodiments, edge features can direct lightto upper or lower layers, or vice-a-versa, where the output is convertedto a unique pattern or code. In some embodiments, when light enters andpasses through upper or lower layers of the part, the exiting lightcreates unique light patterns either by use of a single path or multiplepaths for phase shifting after interacting with the edges of structureor opposing layers. In some embodiments, angled filters may be used sothat projected images can only be seen in certain angles and blocked atall other angles. In some embodiments, different colors of light may becombined or split to yield different color outputs depending on thecolors of the inputs and the configuration of the passages through whichthey pass. Passage may use only open channels formed in electrodepositedmaterials or they may include optical elements such as mirrors, prisms,lens, and the like.

In the various light based approaches, interrogation of exiting lightpatterns may occur in a variety of different ways. In some embodiments ahuman may be used to provide the interpretation with or without imageenhancements (e.g. microscopes, filters, etc.) and with or without codedlook up tables. In some embodiments, light can be piped into channelsand exiting light patterns can be read with a photo array and analyzedby a programmed computer or hardwired circuit. In some embodiments, amicroscope and an observer can be used to compare surface patterns withknown patterns for a go/no-go method. In some embodiments, a bar codereader or laser reflective scanner can be used to read patterns andconvert information to data. In some embodiments, a vision system withpattern recognition can be used for an automated approach to decipheringthe reflection from complex patterns.

As noted above, in some embodiments parts with variable configurationsmay be used to provide altered outputs which may in turn be used toprovide a first level of authentication or used to provide a second,third, or even a higher level of authentication. Configurations ofalternating part elements may include, in addition to those noted above,one or more of (1) a reed-like switch, (2) a toggle, (3) a slide, and(4) a hinge.

In some embodiments, parts may be fabricated to include passive andactive components for activating or reading signals from light, EMfields, voltages, currents, air pressure, etc. In some embodiments, apart surface may be patterned or textured with micro-etchings.

In some embodiments, florescent materials may be added to a part, e.g.in recessed areas to provide wavelength outputs which are different fromwavelength inputs.

In some embodiments, either prior to detection, or as built into thepart, an optical flat may be applied to a part surface and monochromaticlight used to provide fringe patterns indicative of the part surfacewhich may be coded with authentication information.

In some embodiments, the unique features described herein can bemanufactured with the MICA Freeform process from Microfabrica, Inc. ofVan Nuys, Calif., to provide a proprietary and/or sole source method ofpart identification. In alternative embodiments, LIGA, LASER sintering,silicon wafer process and/or LASER milling processes may be used.

Referring to FIGS. 9-17, another implementation of ananti-counterfeiting system is shown. A three-dimensional letter,numeral, symbol, logo or other symbol may be fabricated using anadditive process, such as part 150 as shown. Recessed areas 152 may beprovided in the vertical side walls to create unique patterns which canbe read as a digital or analog code. In this embodiment, eight suchareas 152 are provided: two on each leg of the “X”. The enlarged insetof FIG. 9 shows an example of a unique pattern that may be used tocreate a digital code.

As shown in FIGS. 10-12, undercuts 153 in the top surface 154 createunique and proprietary features enabled by the additive process.

As shown in FIGS. 12-14, internal hollow features 156 may be created forpiping light from an entry location 158 in the devices to anotherlocation or exiting port(s) for further encoding or deciphering.

As shown in FIGS. 15-16, directed light from an emitter/detector (laseror barcode scanner) 160 is focused on the edge of the device 150. Theemitted light is reflected off of the surface and returned to thedetector 160. The reflected light from the exposed flat surface shows adifferent intensity (less scattering and therefore higher intensity)from the light reflecting off of the recessed surfaces, which may berough, textured, non-parallel, and/or a controlled angle of reflection.

As shown in FIG. 17, the emitter 170 may be separated from the detectoror receiver 172. The emitter 170 can be a very simple light source whichreflects off of the edges of the part 150. It does not have to bedirected light. The detector 172 picks up the reflection. The emitter170 can be ambient light, UV, infrared or directed light. The detector172 can be the human eye with optical magnification, image recognitionusing a camera or image scanner i.e. barcode scanner.

Edges with micro-undercuts having sharp features are unique to layeredparts. By controlling the width, height and contrast along theperipheral edge, a unique signature can be deciphered from thereflectance with the use of a directed light and photocell (barcodereader). The edge feature may be an undercut within a layer either belowor between two layers. Edge features with undercuts allow for thereflectance of or scattering/passage of light. As previously mentioned,the edge features can be used to represent unique patterns, such asRandom, Checkerboard, Chevrons, Stair step, Barcode, Morse Code, Binary,and Custom.

Edge features can be internal to the layers or more central to theinterior of the part. They can act as a conduit for light which allowsthe light to enter and reemerge through an opening which is eitherstraight cut or set with a ledge forming an undercut. Adding to thecomplexity of the overall light path from input to output creates uniquemicro optical systems which in some implementations can only be producedwith the proprietary MICA Freeform process provided by Microfabrica,Inc. Edge features can direct light to upper or lower layers where theoutput is converted to a unique pattern or code. When light enters andpasses through upper or lower layers of the part, the exiting lightcreates unique light patterns either by single path or multiple pathsfor phase shifting (bars, fringe patterns, shapes, etc. . . . ) afterinteracting with the edges of structure or opposing layers. Examples ofpossible interference patterns 174 using this technique are shown inFIG. 18.

Referring to FIG. 19, an array of interference patterns 180 can becreated by combining together a unique set of slits 182. Theinterference pattern 180 can be used as a micro barcode. By building thegaps or slits layer by layer, micro-meter or nano-meter gaps can beachieved. The width of the slit can be adjusted depending on the sourceof the electromagnetic wave. It can be as small as 400 nm for visiblelight or 1 064 nm for a Nd:YAG laser. The slits can be created by usingthe additive layerized manufacturing process. By inter-digitating thelayers as shown in FIG. 20, slits can be made with openings in thenanometer range. The middle layer between two layers can be made into aslide thus allowing the gap of slit to be adjusted, as shown in FIGS.21A-21B. By combining different widths between slits, a uniqueinterference pattern can be created as a signature.

Referring to FIGS. 22-26, another implementation of ananti-counterfeiting system is shown using angled filters. With thisapproach, projected images can only be seen in certain angles and atleast partially blocked at all other angles. For example, FIG. 22 showsa plan view of an example of an angle filter 190 fabricated using alayered, additive process. FIG. 23 shows the same angle filter 190rotated 45 degrees about a vertical Y axis. In FIG. 24, the letter I isshown after the filter 190 is rotated 45 degrees about the Y axis and 30degrees about the X axis. In FIG. 25, filter 190 has been rotated 45degrees about the Y axis, 30 degrees about the X axis, and 20 degreesabout the Z axis to bring the letter I into sharp focus. Eachanti-counterfeiting device can have a unique set of predeterminedrotations or viewing angles in which one or more symbols come into focusto indicate the part is genuine. Depending on the implementation, thepart and/or an optical detector can be manually or automaticallyrotated.

Referring to FIGS. 24-27, another implementation of ananti-counterfeiting system is shown which utilizes a combination ofdifferent colors of light: In this exemplary embodiment, the threecolors red, green and blue enter the device 200 from side channels tocreate either yellow, cyan, magenta, or white color. The final color canbe seen from the window on the top. By selectively combining the threecolors red, green and blue as inputs, the output colors can be widerange of colors. For example, the colors red, green and blue can each beprovided by a separate fiber optic cable 202, 204 and 206, respectively,into slidable input block 208. Block 208 may be slid along device 200 toseven different stations in turn. Each station has a differentarrangement of internal optical channels 210 which interconnect block208 with an output aperture 212 associated with that station. Block 208may be slid along device 200 and the color of light emitted from eachaperture 212 observed. Only authentic parts 200 having the properinternal optical channels 210 will produce the correct output colors,which may be read with an optical detector or the human eye, dependingon the implementation.

In some embodiments, interrogating patterns may be used to authenticateparts. For illuminated patterns, light can be piped into channels andexiting light patterns can be confirmed with a photo array. Fornon-illuminated patterns, a microscope may be used to compare surfacepatterns with known pattern for a go-no-go method. A bar code reader orlaser reflective scanner can be used to read patterns and convertinformation to data. A vision system with pattern recognition can beused for an automated approach to deciphering the reflection fromcomplex patterns.

In other embodiments involving methods for altering signal response,light patterns can be altered via magnet or electromagnetic force. Forexample, a Reed switch, Toggle, Slide, and/or Hinge may be used. In someembodiments, passive and/or active components can be imbedded in astructure for activating or reading signals from light, EM field,voltage, current, air pressure, etc. Pattern or surface texture withmicro-etching may be used. Buried features may be used where visualizingis done with X-Ray. The name of a company, a serial number or other codemay be formed underneath a layer of metals. The “buried” marking can berecessed, hollow or made of a different metal. Florescent material maybe added to the structure, via ports or recessed areas, or thesefeatures areas may be filled with platinum or palladium. A flat opticalsurface may be applied to a flat plane and monochromatic light shone onthe surface. By inspecting patterns created by non-planar surfaces,fringes will show high areas. In some embodiments, special surfaces maybe created by a mechanical process. For example, single point toolingcan be used to create unique patterns that can be varied by feed rate.

In some embodiments, a product ID may be imbedded with MICA Freeformtechnology. A fresnel parabolic lens may also be created to uniquelyidentify products.

Referring to FIGS. 31-42, another implementation of ananti-counterfeiting and/or decorative system is shown which utilizesbacklighting of a logo or other feature. FIGS. 31, 32 and 33 show top,side and bottom views of an exemplary logo, respectively. FIGS. 34, 35and 36 show top, side and bottom views, respectively, of an enlargedportion of the exemplary logo of FIGS. 34-36. FIG. 37 shows an angledview of the logo portion shown in FIG. 34, and FIG. 38 shows thecross-section depicted by Arrow 41-41 in FIG. 37. FIGS. 39-42 showvarious cross-sectional views similar to FIG. 38.

As best seen in FIG. 31, device 250 includes a company logo in the formof letters 252. As shown in the side view of FIG. 32, letters 252 areformed in a raised manner above a substrate 254. As shown in the bottomview of FIG. 33, substrate 254 includes slits 256 to allow light totravel through substrate 254, as will be more fully described below.

Referring to the side cross-sectional view of FIG. 35, device 250 isformed from at least three distinct layers: a raised layer 256, anintermediate layer 258, and a substrate layer 254. In some embodiments,each of these three layers can be formed as a single, separate layerusing an additive process, with each layer having a thickness of 100microns or less. In other embodiments, each of these three “layers” canbe formed from multiple sub-layers. Each sub-layer may be less than 100microns thick, but the overall built up layer 256, 258 and/or 254 may bethicker than 100 microns. As used herein, the term “layer” may refer toeither type of construction, depending on the context.

As shown in FIG. 36, substrate layer 254 may include bridge portions 260which support intermediate layer 258 and raised layer 256 in acantilevered fashion over slits 256. Note that slits 256 are not seen inFIG. 35 because the cross-section of that figure is taken through thebridge portions 260. As best seen in FIG. 38, letters 252 are suspendedover substrate 254 such that light coming from beneath device 250 canpass through slits 256 in the substrate layer 254 and emerge from aroundthe edges of the letters 252. FIG. 39 shows an enlarged portion of anedge of a letter 252, and FIG. 40 shows exemplary light paths 262 and264.

In some embodiments, backlighting can be created by the unique additiveprocess of MICA Freeform, such as providing directed or scattered backlighting. With the gap between the edge of the raised layer 256 and theedge of the slit 256 being 2 um or wider, the light path 262 is openeddirectly from the backlighting to the front, as depicted in FIG. 41. Thedirect and high intensity light 262 is shown around the edges of thelogo. With the structure overlapped 2 um or more, the light path 264 isformed indirectly from the backlighting to the front, as depicted inFIG. 42. The scattered light 264 is shown on the edges of the logo withlower intensity since it is scattered before traveling to and beyond thelogo edges.

Referring to FIG. 43, another implementation of an anti-counterfeitingsystem 300 is shown which utilizes backlighting to magnify a barcode. Inthis exemplary embodiment, the barcode 302 is imbedded in a curved MEMSdevice 304 having a scale of microns. The barcode 302 can be magnifiedby projecting onto a surface 306 using backlighting 308. A barcodereader (not shown) with less resolution than would be needed to read thebarcode 302 directly can be used to read the projected code 310 from thesurface 306.

FURTHER COMMENTS AND CONCLUSIONS

Extended hollow channels and hollow but sealed passages may be formedusing the teachings set forth in U.S. Pat. No. 8,262,916, entitled“Enhanced Methods for at least Partial In Situ Release of SacrificialMaterial from Cavities or Channels and/or Sealing of Etching HolesDuring Fabrication of Multi-Layer Microscale or Millimeter-scale ComplexThree-Dimensional Structures”.

Structural or sacrificial dielectric materials may be incorporated intoembodiments of the present invention in a variety of different ways.Such materials may form a third material or higher deposited on selectedlayers or may form one of the first two materials deposited on somelayers. Additional teachings concerning the formation of structures ondielectric substrates and/or the formation of structures thatincorporate dielectric materials into the formation process andpossibility into the final structures as formed are set forth in anumber of patent applications filed Dec. 31, 2003. The first of thesefilings is U.S. Patent Application No. 60/534,184 which is entitled“Electrochemical Fabrication Methods Incorporating Dielectric Materialsand/or Using Dielectric Substrates”. The second of these filings is U.S.Patent Application No. 60/533,932, which is entitled “ElectrochemicalFabrication Methods Using Dielectric Substrates”. The third of thesefilings is U.S. Patent Application No. 60/534,157, which is entitled“Electrochemical Fabrication Methods Incorporating DielectricMaterials”. The fourth of these filings is U.S. Patent Application No.60/533,891, which is entitled “Methods for Electrochemically FabricatingStructures Incorporating Dielectric Sheets and/or Seed layers That ArePartially Removed Via Planarization”. A fifth such filing is U.S. PatentApplication No. 60/533,895, which is entitled “ElectrochemicalFabrication Method for Producing Multi-layer Three-DimensionalStructures on a Porous Dielectric”. Additional patent filings thatprovide teachings concerning incorporation of dielectrics into the EFABprocess include U.S. patent application Ser. No. 11/139,262, filed May26, 2005, now U.S. Pat. No. 7,501,328, by Lockard, et al., and which isentitled “Methods for Electrochemically Fabricating Structures UsingAdhered Masks, Incorporating Dielectric Sheets, and/or Seed Layers thatare Partially Removed Via Planarization”; and U.S. patent applicationSer. No. 11/029,216, filed Jan. 3, 2005 by Cohen, et al., now abandoned,and which is entitled “Electrochemical Fabrication Methods IncorporatingDielectric Materials and/or Using Dielectric Substrates”. These patentfilings are each hereby incorporated herein by reference as if set forthin full herein.

Some embodiments may employ diffusion bonding or the like to enhanceadhesion between successive layers of material. Various teachingsconcerning the use of diffusion bonding in electrochemical fabricationprocesses are set forth in U.S. patent application Ser. No. 10/841,384which was filed May 7, 2004 by Cohen et al., now abandoned, which isentitled “Method of Electrochemically Fabricating Multilayer StructuresHaving Improved Interlayer Adhesion” and which is hereby incorporatedherein by reference as if set forth in full. This application is herebyincorporated herein by reference as if set forth in full.

Though the embodiments explicitly set forth herein have consideredmulti-material layers to be formed one after another. In someembodiments, it is possible to form structures on a layer-by-layer basisbut to deviate from a strict planar layer on planar layer build upprocess in favor of a process that interlaces material between thelayers. Such alternative build processes are disclosed in U.S.application Ser. No. 10/434,519, filed on May 7, 2003, now U.S. Pat. No.7,252,861, entitled Methods of and Apparatus for ElectrochemicallyFabricating Structures Via Interlaced Layers or Via Selective Etchingand Filling of Voids. The techniques disclosed in this referencedapplication may be combined with the techniques and alternatives setforth explicitly herein to derive additional alternative embodiments. Inparticular, the structural features are still defined on aplanar-layer-by-planar-layer basis but material associated with somelayers are formed along with material for other layers such thatinterlacing of deposited material occurs. Such interlacing may lead toreduced structural distortion during formation or improved interlayeradhesion. This patent application is herein incorporated by reference asif set forth in full.

The patent applications and patents set forth below are herebyincorporated by reference herein as if set forth in full. The teachingsin these incorporated applications can be combined with the teachings ofthe instant application in many ways: For example, enhanced methods ofproducing structures may be derived from some combinations of teachings,enhanced structures may be obtainable, enhanced apparatus may bederived, and the like.

US Pat App No., Filing Date US App Pub No., Pub Date US Patent No., PubDate Inventor, Title 09/493,496 - Jan. 28, 2000 Cohen, “Method ForElectrochemical Fabrication” U.S. Pat. No. 6,790,377 - Sep. 14, 200410/677,556 - Oct. 1, 2003 Cohen, “Monolithic Structures IncludingAlignment and/or 2004-0134772 - Jul. 15, 2004 Retention Fixtures forAccepting Components” 10/830,262 - Apr. 21, 2004 Cohen, “Methods ofReducing Interlayer Discontinuities in 2004-0251142A - Dec. 16, 2004Electrochemically Fabricated Three-Dimensional Structures” U.S. Pat. No.7,198,704 - Apr. 3, 2007 10/271,574 -Oct. 15, 2002 Cohen, “Methods ofand Apparatus for Making High Aspect 2003-0127336A - Jul. 10, 2003 RatioMicroelectromechanical Structures” U.S. Pat. No. 7,288,178 - Oct. 30,2007 10/697,597 - Dec. 20, 2002 Lockard, “EFAB Methods and ApparatusIncluding Spray 2004-0146650A - Jul. 29, 2004 Metal or Powder CoatingProcesses” 10/677,498 - Oct. 1, 2003 Cohen, “Multi-cell Masks andMethods and Apparatus for 2004-0134788 - Jul. 15, 2004 Using Such MasksTo Form Three-Dimensional Structures” U.S. Pat. No. 7,235,166 - Jun. 26,2007 10/724,513 - Nov. 26, 2003 Cohen, “Non-Conformable Masks andMethods and 2004-0147124 - Jul. 29, 2004 Apparatus for FormingThree-Dimensional Structures” U.S. Pat. No. 7,368,044 - May 6, 200810/607,931 - Jun. 27, 2003 Brown, “Miniature RF and Microwave Componentsand 2004-0140862 - Jul. 22, 2004 Methods for Fabricating SuchComponents” U.S. Pat. No. 7,239,219 - Jul. 3, 2007 10/841,100 - May 7,2004 Cohen, “Electrochemical Fabrication Methods Including Use2005-0032362 - Feb. 10, 2005 of Surface Treatments to Reduce Overplatingand/or U.S. Pat. No. 7,109,118 - Sep. 19, 2006 Planarization DuringFormation of Multi-layer Three- Dimensional Structures” 10/387,958 -Mar. 13, 2003 Cohen, “Electrochemical Fabrication Method and2003-022168A - Dec. 4, 2003 Application for Producing Three-DimensionalStructures Having Improved Surface Finish” 10/434,494 - May 7, 2003Zhang, “Methods and Apparatus for Monitoring Deposition 2004-0000489A -Jan. 1, 2004 Quality During Conformable Contact Mask Plating Operations”10/434,289 - May 7, 2003 Zhang, “Conformable Contact Masking Methods and20040065555A - Apr. 8, 2004 Apparatus Utilizing In Situ CathodicActivation of a Substrate” 10/434,294 - May 7, 2003 Zhang,“Electrochemical Fabrication Methods With 2004-0065550A - Apr. 8, 2004Enhanced Post Deposition Processing” 10/434,295 - May 7, 2003 Cohen,“Method of and Apparatus for Forming Three- 2004-0004001A - Jan. 8, 2004Dimensional Structures Integral With Semiconductor Based Circuitry”10/434,315 - May 7, 2003 Bang, “Methods of and Apparatus for MoldingStructures 2003-0234179 A - Dec. 25, 2003 Using Sacrificial MetalPatterns” U.S. Pat. No. 7,229,542 - Jun. 12, 2007 10/434,103 - May 7,2004 Cohen, “Electrochemically Fabricated Hermetically Sealed2004-0020782A - Feb. 5, 2004 Microstructures and Methods of andApparatus for U.S. Pat. No. 7,160,429 - Jan. 9, 2007 Producing SuchStructures” 10/841,006 - May 7, 2004 Thompson, “ElectrochemicallyFabricated Structures Having 2005-0067292 - May 31, 2005 Dielectric orActive Bases and Methods of and Apparatus for Producing Such Structures”10/434,519 - May 7, 2003 Smalley, “Methods of and Apparatus forElectrochemically 2004-0007470A - Jan. 15, 2004 Fabricating StructuresVia Interlaced Layers or Via Selective U.S. Pat. No. 7,252,861 - Aug. 7,2007 Etching and Filling of Voids” 10/724,515 - Nov. 26, 2003 Cohen,“Method for Electrochemically Forming Structures 2004-0182716 - Sep. 23,2004 Including Non-Parallel Mating of Contact Masks and U.S. Pat. No.7,291,254 - Nov. 6, 2007 Substrates” 10/841,347 - May 7, 2004 Cohen,“Multi-step Release Method for Electrochemically 2005-0072681 - Apr. 7,2005 Fabricated Structures” 60/533,947 - Dec. 31, 2003 Kumar, “ProbeArrays and Method for Making” 60/534,183 - Dec. 31, 2003 Cohen, “Methodand Apparatus for Maintaining Parallelism of Layers and/or AchievingDesired Thicknesses of Layers During the Electrochemical Fabrication ofStructures” 11/733,195 - Apr. 9, 2007 Kumar, “Methods of FormingThree-Dimensional Structures 2008-0050524 - Feb. 28, 2008 Having ReducedStress and/or Curvature” 11/506,586 - Aug. 8, 2006 Cohen, “Mesoscale andMicroscale Device Fabrication 2007-0039828 - Feb. 22, 2007 Methods UsingSplit Structures and Alignment Elements” U.S. Pat. No. 7,611,616 - Nov.3, 2009 10/949,744 - Sep. 24, 2004 Lockard, “Three-DimensionalStructures Having Feature 2005-0126916 - Jun. 16, 2005 Sizes SmallerThan a Minimum Feature Size and Methods U.S. Pat. No. 7,498,714 - Mar.3, 2009 for Fabricating”

Though various portions of this specification have been provided withheaders, it is not intended that the headers be used to limit theapplication of teachings found in one portion of the specification fromapplying to other portions of the specification. For example, it shouldbe understood that alternatives acknowledged in association with oneembodiment, are intended to apply to all embodiments to the extent thatthe features of the different embodiments make such applicationfunctional and do not otherwise contradict or remove all benefits of theadopted embodiment. Various other embodiments of the present inventionexist. Some of these embodiments may be based on a combination of theteachings herein with various teachings incorporated herein byreference.

In view of the teachings herein, many further embodiments, alternativesin design and uses of the embodiments of the instant invention will beapparent to those of skill in the art. As such, it is not intended thatthe invention be limited to the particular illustrative embodiments,alternatives, and uses described above but instead that it be solelylimited by the claims presented hereafter.

We claim:
 1. A counterfeiting deterrent device comprising: a pluralityof layers formed by an additive process, wherein each of the layers hasa thickness of less than 100 microns, wherein at least one of the layershas a series of indentations formed in an outer edge of the layer suchthat the indentations can be observed to verify that the deviceoriginated from a predetermined source.
 2. The device of claim 1,wherein each of the layers has a thickness of less than 30 microns. 3.The device of claim 1, wherein each of the indentations has a width ofless than 50 microns.
 4. The device of claim 1, wherein each of theindentations has a depth of less than 200 microns.
 5. The device ofclaim 1, wherein the series of indentations traverses more than one ofthe plurality of layers.
 6. The device of claim 1, wherein the pluralityof layers includes two adjacent layers each having a different series ofindentations formed in its outer edge.
 7. The device of claim 1, whereinthe series of indentations forms a non-repeating digital code having alength of at least three indentations which together represent a threedigit binary number.
 8. The device of claim 1, wherein the series ofindentations traverses less than all of the plurality of layers, suchthat an overhang exists over the indentations.
 9. The device of claim 1,further comprising a series of collinear exterior edge surfaces locatedbetween the indentations, and wherein each of the indentions has atleast one recessed surface that is non-parallel to the collinearexterior edge surfaces.
 10. The device of claim 1, wherein each of thelayers is formed of a deposited material with each successive layerformed on and adhered to a previously formed layer, wherein eachsuccessive layer comprising at least two materials, one of which is astructural material and the other of which is a sacrificial material,and wherein the forming of each of the plurality of successive layerscomprises: (i) depositing a first of the at least two materials; (ii)depositing a second of the at least two materials; and (iii) planarizingthe deposited first and second materials, wherein after the plurality ofsuccessive layers has been formed, at least a portion of the sacrificialmaterial is separated from the structural material to reveal athree-dimensional structure.
 11. A method of deterring counterfeitingcomprises the steps of: providing a counterfeiting deterrent deviceformed by a multilayer additive process, wherein each of the layers ofthe device has a thickness of less than 100 microns, and wherein atleast one of the layers has a series of indentations formed in an outeredge of the layer such that the indentations can be observed to verifythat the device originated from a predetermined source.
 12. The methodof claim 11, wherein the counterfeiting deterrent device is integrallyformed on an article to be sold.
 13. The method of claim 11, wherein thecounterfeiting deterrent device is formed separately from an article tobe sold, the method further comprising the step of attaching the deviceto the article to be sold.
 14. The method of claim 11, furthercomprising the steps of directing a source of coherent light onto theseries of indentations, and observing light that is reflected from theindentations with an electronic sensor.
 15. The method of claim 11,wherein each of the layers is formed of a deposited material with eachsuccessive layer formed on and adhered to a previously formed layer,wherein each successive layer comprising at least two materials, one ofwhich is a structural material and the other of which is a sacrificialmaterial, and wherein the forming of each of the plurality of successivelayers comprises: (i) depositing a first of the at least two materials;(ii) depositing a second of the at least two materials; and (iii)planarizing the deposited first and second materials, wherein after theplurality of successive layers has been formed, at least a portion ofthe sacrificial material is separated from the structural material toreveal a three-dimensional structure.
 16. A counterfeiting deterrentdevice comprising: at least one raised layer having outer edges in ashape of a logo; at least one substrate layer having lateral dimensionsthat extend beyond the outer edges of the raised layer; at least oneintermediate layer disposed between the raised layer and the substratelayer and supporting the raised layer on the substrate layer, theintermediate layer having lateral dimensions that are recessed from theouter edges of the raised layer; a slit formed in the substrate layer,the slit having outer edges that correspond with the outer edges of theraised layer; and at least one light source located on an opposite sideof the substrate layer from the intermediate and raised layers, thelight source configured and arranged to shine a light through the slitin the substrate layer and past the intermediate layer to light up theouter edge of the raised layer, wherein the raised layer, substratelayer and intermediate layer are all formed by an additive process, andwherein each of the layers has a thickness of less than 100 microns. 17.The device of claim 16, wherein the outer edges of the slit are locatedlaterally outward from the outer edges of the raised layer such that thelight may travel through the slit and directly past the outer edges ofthe raised layer.
 18. The device of claim 16, wherein the outer edges ofthe slit are located laterally inward from the outer edges of the raisedlayer such that the light must travel through the slit and scatter froma recessed surface of the raised layer and an outer surface of thesubstrate layer before passing the outer edges of the raised layer. 19.The device of claim 16, wherein each of the layers is formed of adeposited material with each successive layer formed on and adhered to apreviously formed layer, wherein each successive layer comprising atleast two materials, one of which is a structural material and the otherof which is a sacrificial material, and wherein the forming of each ofthe plurality of successive layers comprises: (i) depositing a first ofthe at least two materials; (ii) depositing a second of the at least twomaterials; and (iii) planarizing the deposited first and secondmaterials, wherein after the plurality of successive layers has beenformed, at least a portion of the sacrificial material is separated fromthe structural material to reveal a three-dimensional structure.
 20. Thedevice of claim 16, wherein the device is formed separately from anarticle to be sold and configured to be attached to the article to besold.